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SI4900DY-T1-E3
the part number is SI4900DY-T1-E3
Part
SI4900DY-T1-E3
Manufacturer
Description
MOSFET 2N-CH 60V 5.3A 8-SOIC
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
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Uni Price $0.96 $0.9408 $0.912 $0.8832 $0.8448 Get Quotation!
Specification
Min Operating Temperature -55 °C
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Mount Surface Mount
Fall Time 10 ns
RoHS Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) 60 V
Drain to Source Resistance 58 mΩ
Element Configuration Dual
Number of Channels 2
Number of Pins 8
Height 1.55 mm
Number of Elements 2
Input Capacitance 665 pF
Width 4 mm
Lead Free Lead Free
Rds On Max 58 mΩ
Max Power Dissipation 2 W
Drain to Source Breakdown Voltage 60 V
Gate to Source Voltage (Vgs) 20 V
Turn-On Delay Time 10 ns
Weight 186.993455 mg
Resistance 58 mΩ
Max Operating Temperature 150 °C
Power Dissipation 2 W
Continuous Drain Current (ID) 5.3 A
Rise Time 15 ns
Length 5 mm
Turn-Off Delay Time 20 ns
Contact Plating Tin
Case/Package SOIC N
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