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SI5406DC-T1-GE3
the part number is SI5406DC-T1-GE3
Part
SI5406DC-T1-GE3
Manufacturer
Description
MOSFET N-CH 12V 6.9A 1206-8
Lead Free/ROHS
pb RoHs
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Specification
Drain to Source Voltage (Vdss): 12V
Power Dissipation (Max): 1.3W (Ta)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 12V 6.9A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
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