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SI5515DC-T1-E3
the part number is SI5515DC-T1-E3
Part
SI5515DC-T1-E3
Manufacturer
Description
MOSFET N/P-CH 20V 4.4A 1206-8
Lead Free/ROHS
pb RoHs
Datasheets
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Specification
Drain to Source Voltage (Vdss): 20V
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 1V @ 250µA
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: Mosfet Array N and P-Channel 20V 4.4A, 3A 1.1W Surface Mount 1206-8 ChipFET™
FET Feature: Logic Level Gate
Power - Max: 1.1W
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N and P-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3A
Base Part Number: SI5515
Other Names: SI5515DC-T1-E3TR SI5515DCT1E3
Input Capacitance (Ciss) (Max) @ Vds: -
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
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