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SI6410DQ-T1-E3
the part number is SI6410DQ-T1-E3
Part
SI6410DQ-T1-E3
Manufacturer
Description
MOSFET N-CH 30V 8TSSOP
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Part
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Pricing
Specification
RdsOn(Max)@Id 1V @ 250µA (Min)
Vgs(th)(Max)@Id ±20V
Vgs 33 nC @ 5 V
FETFeature -55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature 8-TSSOP
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType 8-TSSOP (0.173, 4.40mm Width)
InputCapacitance(Ciss)(Max)@Vds 1.5W (Ta)
Series TrenchFET®
Qualification
SupplierDevicePackage -
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 7.8A (Ta)
Vgs(Max) -
MinRdsOn) 14mOhm @ 7.8A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) Surface Mount
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