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SI7888DP-T1-E3
the part number is SI7888DP-T1-E3
Part
SI7888DP-T1-E3
Manufacturer
Description
MOSFET N-CH 30V 9.4A PPAK SO-8
Lead Free/ROHS
pb RoHs
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Specification
Drain to Source Voltage (Vdss): 30V
Power Dissipation (Max): 1.8W (Ta)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 30V 9.4A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Vgs (Max): ±12V
Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.4A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
Operating Temperature: -55°C ~ 150°C (TJ)
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