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SI9926BDY-T1-E3
the part number is SI9926BDY-T1-E3
Part
SI9926BDY-T1-E3
Manufacturer
Description
MOSFET 2N-CH 20V 6.2A 8-SOIC
Lead Free/ROHS
pb RoHs
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Specification
Drain to Source Voltage (Vdss): 20V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: Mosfet Array 2 N-Channel (Dual) 20V 6.2A 1.14W Surface Mount 8-SO
FET Feature: Logic Level Gate
Power - Max: 1.14W
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: 2 N-Channel (Dual)
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 6.2A
Base Part Number: SI9926
Other Names: SI9926BDY-T1-E3TR
Input Capacitance (Ciss) (Max) @ Vds: -
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
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