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SIA400EDJ-T1-GE3
the part number is SIA400EDJ-T1-GE3
Part
SIA400EDJ-T1-GE3
Manufacturer
Description
MOSFET N-CH 30V 12A SC-70
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.714 $0.6997 $0.6783 $0.6569 $0.6283 Get Quotation!
Specification
Min Operating Temperature -55 °C
Drain to Source Breakdown Voltage 30 V
Gate to Source Voltage (Vgs) 12 V
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Mount Surface Mount
RoHS Compliant
Radiation Hardening No
Max Operating Temperature 150 °C
Drain to Source Voltage (Vdss) 30 V
Power Dissipation 3.5 W
Drain to Source Resistance 19 mΩ
Continuous Drain Current (ID) 12 A
Element Configuration Single
Number of Channels 1
Length 2.05 mm
Number of Pins 6
Height 750 µm
Number of Elements 1
Input Capacitance 1.265 nF
Width 2.05 mm
Rds On Max 19 mΩ
Max Power Dissipation 19.2 W
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