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SIR646DP-T1-GE3
the part number is SIR646DP-T1-GE3
Part
SIR646DP-T1-GE3
Manufacturer
Description
MOSFET N-CH 40V 60A PPAK 8SO
Lead Free/ROHS
pb RoHs
Datasheets
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Pricing
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Uni Price $15.0 $14.7 $14.25 $13.8 $13.2 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 40V
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 40V 60A (Tc) 5W (Ta), 54W (Tc) Surface Mount PowerPAK® SO-8
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Other Names: SIR646DP-T1-GE3CT
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 20V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
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