1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $3.0 | $2.94 | $2.85 | $2.76 | $2.64 | Get Quotation! |
Drain to Source Voltage (Vdss): | 100V |
---|---|
Power Dissipation (Max): | 50W (Tc) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Packaging: | Tape & Reel (TR) |
Supplier Device Package: | PG-TO263-3-2 |
Vgs(th) (Max) @ Id: | 2V @ 21µA |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Detailed Description: | N-Channel 100V 10.3A (Tc) 50W (Tc) Surface Mount PG-TO263-3-2 |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Email: | [email protected] |
FET Type: | N-Channel |
Series: | SIPMOS® |
Current - Continuous Drain (Id) @ 25°C: | 10.3A (Tc) |
Other Names: | SP000013836 SPB10N10LT |
Input Capacitance (Ciss) (Max) @ Vds: | 444pF @ 25V |
Vgs (Max): | ±20V |
Rds On (Max) @ Id, Vgs: | 154 mOhm @ 8.1A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!