| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $1.19 | $1.1662 | $1.1305 | $1.0948 | $1.0472 | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Drain to Source Breakdown Voltage | 600 V |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| REACH SVHC | Unknown |
| Dual Supply Voltage | 650 V |
| Termination | Through Hole |
| Fall Time | 9 ns |
| Turn-On Delay Time | 12 ns |
| RoHS | Compliant |
| Max Operating Temperature | 150 °C |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation | 83 W |
| Drain to Source Resistance | 700 mΩ |
| Continuous Drain Current (ID) | 6.6 A |
| Element Configuration | Single |
| Rise Time | 25 ns |
| Turn-Off Delay Time | 36 ns |
| Number of Pins | 3 |
| Input Capacitance | 790 pF |
| Lead Free | Lead Free |
| Rds On Max | 700 mΩ |
| Case/Package | TO-247-3 |
| Max Power Dissipation | 83 W |
INFINEON
Power Field-Effect Transistor, 6.6A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!