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SQD50N06-09L_GE3
the part number is SQD50N06-09L_GE3
Part
SQD50N06-09L_GE3
Manufacturer
Description
MOSFET N-CH 60V 50A
Lead Free/ROHS
pb RoHs
Datasheets
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Uni Price $5.5545 $5.4434 $5.2768 $5.1101 $4.888 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 60V
Power Dissipation (Max): 136W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252, (D-Pak)
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Other Names: SQD50N06-09L_GE3CT
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
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