1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Voltage-Breakdown(V(BR)GSS) | 40 V |
---|---|
DraintoSourceVoltage(Vdss) | 200 µA @ 15 V |
OperatingTemperature | TO-236-3, SC-59, SOT-23-3 |
ProductStatus | Obsolete |
Package/Case | - |
Grade | |
MountingType | SOT-23 |
Resistance-RDS(On) | - |
Voltage-Cutoff(VGSoff)@Id | 350 mW |
CurrentDrain(Id)-Max | 4.5pF @ 15V |
InputCapacitance(Ciss)(Max)@Vds | -55°C ~ 150°C (TJ) |
Series | - |
Qualification | |
SupplierDevicePackage | - |
FETType | N-Channel |
Current-Drain(Idss)@Vds(Vgs=0) | 300 mV @ 10 nA |
Package | Tape & Reel (TR) |
Power-Max | Surface Mount |
Vishay Siliconix
JFET; N-Channel; -40 V (Min.); -1 nA @ 125 degC; -2 pA; 350 mW; 0.7 V (Typ.)
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!