shengyuic
shengyuic
STD12N60DM2AG
the part number is STD12N60DM2AG
Part
STD12N60DM2AG
Manufacturer
Description
AUTOMOTIVE-GRADE N-CHANNEL 600 V
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $2.4336 $2.3849 $2.3119 $2.2389 $2.1416 Get Quotation!
Specification
RdsOn(Max)@Id 5V @ 250µA
Vgs(th)(Max)@Id ±25V
Vgs 14.5 nC @ 10 V
FETFeature 110W (Tc)
DraintoSourceVoltage(Vdss) 600 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 0V, 10V
ProductStatus Active
Package/Case Automotive
GateCharge(Qg)(Max)@Vgs AEC-Q101
Grade
MountingType TO-252 (DPAK)
InputCapacitance(Ciss)(Max)@Vds -
Series MDmesh™ DM2
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 10A (Tc)
Vgs(Max) 614 pF @ 100 V
MinRdsOn) 430mOhm @ 5A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For STD12N60DM2AG
STD10

Eaton - Bussmann Electrical Division

FUSE CRTRDGE 10A 240VAC CYLINDR

STD100N03LT4

STMicroelectronics

MOSFET N-CH 30V 80A DPAK

STD100N10F7

STMicroelectronics

MOSFET N CH 100V 80A DPAK

STD100N10LF7AG

STMicroelectronics

MOSFET N-CH 100V 80A DPAK

STD100N3LF3

STMicroelectronics

MOSFET N-CH 30V 80A DPAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!