| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $3.6156 | $3.5433 | $3.4348 | $3.3264 | $3.1817 | Get Quotation! |
| RdsOn(Max)@Id | 4V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±30V |
| Vgs | 46 nC @ 10 V |
| FETFeature | 30W (Tc) |
| DraintoSourceVoltage(Vdss) | 600 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Obsolete |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-281 (I2PAKFP) |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | MDmesh™ II |
| Qualification | |
| SupplierDevicePackage | TO-262-3 Full Pack, I2PAK |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
| Vgs(Max) | 1400 pF @ 50 V |
| MinRdsOn) | 190mOhm @ 8A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!
