1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $3.519 | $3.4486 | $3.343 | $3.2375 | $3.0967 | Get Quotation! |
RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±25V |
Vgs | 41.5 nC @ 10 V |
FETFeature | 190W (Tc) |
DraintoSourceVoltage(Vdss) | 650 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | I2PAK |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | MDmesh™ M2 |
Qualification | |
SupplierDevicePackage | TO-262-3 Long Leads, I2PAK, TO-262AA |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 24A (Tc) |
Vgs(Max) | 1790 pF @ 100 V |
MinRdsOn) | 140mOhm @ 12A, 10V |
Package | Tube |
PowerDissipation(Max) | 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!