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STP6N65M2
the part number is STP6N65M2
Part
STP6N65M2
Manufacturer
Description
MOSFET N-CH 650V 4A TO220
Lead Free/ROHS
pb RoHs
Datasheets
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Pricing
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±25V
Vgs 9.8 nC @ 10 V
FETFeature 60W (Tc)
DraintoSourceVoltage(Vdss) 650 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-220
InputCapacitance(Ciss)(Max)@Vds -
Series MDmesh™
Qualification
SupplierDevicePackage TO-220-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 4A (Tc)
Vgs(Max) 226 pF @ 100 V
MinRdsOn) 1.35Ohm @ 2A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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