1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 6.4 nC @ 10 V |
FETFeature | 35W (Tc) |
DraintoSourceVoltage(Vdss) | 60 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-251 (IPAK) |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | DeepGATE™, STripFET™ VI |
Qualification | |
SupplierDevicePackage | TO-251-3 Short Leads, IPak, TO-251AA |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 10A (Tc) |
Vgs(Max) | 340 pF @ 48 V |
MinRdsOn) | 160mOhm @ 5A, 10V |
Package | Tube |
PowerDissipation(Max) | 175°C (TJ) |
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