1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $168.92 | $165.5416 | $160.474 | $155.4064 | $148.6496 | Get Quotation! |
RdsOn(Max)@Id | 165mOhm @ 10A, 10V |
---|---|
Vgs(th)(Max)@Id | 60 nC @ 10 V |
Vgs | 4V @ 250µA |
FETFeature | - |
DraintoSourceVoltage(Vdss) | MOSFET (Metal Oxide) |
OperatingTemperature | 150°C (TJ) |
DriveVoltage(MaxRdsOn | 20A (Tc) |
ProductStatus | MDmesh™ II |
Package/Case | Through Hole |
GateCharge(Qg)(Max)@Vgs | TO-247-3 |
Grade | TO-247-3 |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | 1800 pF @ 50 V |
Series | Tube |
Qualification | |
SupplierDevicePackage | - |
FETType | Active |
Technology | N-Channel |
Current-ContinuousDrain(Id)@25°C | 600 V |
Vgs(Max) | ±30V |
MinRdsOn) | 10V |
Package | 1 |
PowerDissipation(Max) | 140W (Tc) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!