1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $8.2096 | $8.0454 | $7.7991 | $7.5528 | $7.2244 | Get Quotation! |
RdsOn(Max)@Id | 5V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±25V |
Vgs | 71 nC @ 10 V |
FETFeature | 190W (Tc) |
DraintoSourceVoltage(Vdss) | 650 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | TO-247-3 |
GateCharge(Qg)(Max)@Vgs | TO-247-3 |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | MDmesh™ V |
Qualification | |
SupplierDevicePackage | Through Hole |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 30A (Tc) |
Vgs(Max) | 3000 pF @ 100 V |
MinRdsOn) | 95mOhm @ 15A, 10V |
Package | Tube |
PowerDissipation(Max) | 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!