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TJ9A10M3,S4Q
the part number is TJ9A10M3,S4Q
Part
TJ9A10M3,S4Q
Description
TJ9A10M3,S4Q
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pb RoHs
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Specification
RdsOn(Max)@Id 4V @ 1mA
Vgs(th)(Max)@Id ±20V
Vgs 47 nC @ 10 V
FETFeature 19W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-220SIS
InputCapacitance(Ciss)(Max)@Vds -
Series U-MOSVI
Qualification
SupplierDevicePackage TO-220-3 Full Pack
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 9A (Ta)
Vgs(Max) 2900 pF @ 10 V
MinRdsOn) 170mOhm @ 4.5A, 10V
Package Tube
PowerDissipation(Max) 150°C
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