| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 2V @ 500µA |
|---|---|
| Vgs(th)(Max)@Id | +20V, -25V |
| Vgs | 115 nC @ 10 V |
| FETFeature | 1.6W (Ta), 45W (Tc) |
| DraintoSourceVoltage(Vdss) | 30 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 4.5V, 10V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | 8-SOP Advance (5x5) |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | U-MOSVI |
| Qualification | |
| SupplierDevicePackage | 8-PowerVDFN |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 34A (Ta) |
| Vgs(Max) | 4800 pF @ 10 V |
| MinRdsOn) | 4.8mOhm @ 17A, 10V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | 150°C |
TOSHIBA
TRANSISTOR 40 A, 30 V, 0.0062 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-5Q1A, 8 PIN, FET General Purpose Power
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!