shengyuic
shengyuic
VS-E5TH3012-N3
the part number is VS-E5TH3012-N3
Part
VS-E5TH3012-N3
Description
DIODE GEN PURP 1.2KV 30A TO220AC
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Current-ReverseLeakage@Vr -
Speed Fast Recovery =< 500ns, > 200mA (Io)
F TO-220-2
ProductStatus Obsolete
Package/Case -55°C ~ 175°C
Grade -
Capacitance@Vr Through Hole
ReverseRecoveryTime(trr) 50 µA @ 1200 V
MountingType TO-220AC
Series FRED Pt®
Qualification
SupplierDevicePackage 113 ns
Voltage-Forward(Vf)(Max)@If 2.3 V @ 30 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 1200 V
OperatingTemperature-Junction -
Current-AverageRectified(Io) 30A
Package Tube
Related Parts For VS-E5TH3012-N3
VS-E4PH3006L-N3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO247AD

VS-E4PH3006LHN3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO247AD

VS-E4PH6006L-N3

Vishay General Semiconductor - Diodes Division

DIODE GP 600V 60A TO247AC

VS-E4PH6006LHN3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 60A TO247AD

VS-E4PU3006L-N3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO247AD

VS-E4PU3006LHN3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO247AD

VS-E4PU6006L-N3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 60A TO247AD

VS-E4PU6006LHN3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 60A TO247AD

VS-E4TU2006FP-N3

Vishay General Semiconductor - Diodes Division

DIODE GP 600V 20A TO220-2FP

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!