| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $1.0413 | $1.0205 | $0.9892 | $0.958 | $0.9163 | Get Quotation! |
| Min Operating Temperature | -40 °C |
|---|---|
| Threshold Voltage | 1 V |
| Mount | Surface Mount |
| Output Configuration | Low Side |
| Fall Time | 15 µs |
| RoHS | Compliant |
| Radiation Hardening | No |
| Drain to Source Voltage (Vdss) | 60 V |
| Drain to Source Resistance | 400 mΩ |
| Element Configuration | Dual |
| Number of Channels | 2 |
| Number of Pins | 8 |
| Height | 1.5 mm |
| Width | 3.95 mm |
| Max Power Dissipation | 1.16 W |
| Nominal Vgs | 1 V |
| Gate to Source Voltage (Vgs) | 5 V |
| REACH SVHC | No SVHC |
| Turn-On Delay Time | 5 µs |
| Number of Outputs | 2 |
| Resistance | 350 mΩ |
| Max Operating Temperature | 150 °C |
| Continuous Drain Current (ID) | 1.2 A |
| Rise Time | 10 µs |
| Fault Protection | Over Temperature, Over Voltage |
| Length | 4.95 mm |
| Turn-Off Delay Time | 45 µs |
| Output Current per Channel | 1.2 A |
| Packaging | Tape & Reel (TR) |
| Interface | On/Off |
| Max Output Current | 1.2 A |
| Case/Package | SO |
Diodes Inc.
ZXMS6001N3 Series N-Channel 60 V 0.675 Ohm Protected INTELLIFETTM MOSFET-SOT-223
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Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!