1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $1.0088 | $0.9886 | $0.9584 | $0.9281 | $0.8877 | Get Quotation! |
Min Operating Temperature | -40 °C |
---|---|
Schedule B | 8542390000, 8542390000|8542390000|8542390000|8542390000|8542390000 |
Mount | Surface Mount |
Output Configuration | Low Side |
Fall Time | 15 µs |
RoHS | Compliant |
Radiation Hardening | No |
Drain to Source Voltage (Vdss) | 60 V |
Drain to Source Resistance | 350 mΩ |
Number of Channels | 1 |
Voltage | 5.5 V |
Height | 1.65 mm |
Width | 3.7 mm |
Lead Free | Lead Free |
Max Power Dissipation | 1.6 W |
Gate to Source Voltage (Vgs) | 700 mV |
REACH SVHC | No SVHC |
Output Current | 700 mA |
Turn-On Delay Time | 5 µs |
Weight | 7.994566 mg |
Number of Outputs | 1 |
Max Operating Temperature | 150 °C |
Power Dissipation | 1 W |
Continuous Drain Current (ID) | 1.3 A |
Rise Time | 10 µs |
Fault Protection | Over Temperature, Over Voltage |
Length | 6.7 mm |
Turn-Off Delay Time | 45 µs |
Current | 1.3 A |
Interface | On/Off |
Max Output Current | 1.3 A |
Case/Package | SOT-223 |
Diodes Inc.
ZXMS6001N3 Series N-Channel 60 V 0.675 Ohm Protected INTELLIFETTM MOSFET-SOT-223
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!