1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $1.2369 | $1.2122 | $1.1751 | $1.1379 | $1.0885 | Get Quotation! |
Min Operating Temperature | -40 °C |
---|---|
Threshold Voltage | 1 V |
Schedule B | 8542390000, 8542390000|8542390000|8542390000|8542390000|8542390000 |
Mount | Surface Mount |
Output Configuration | Low Side |
Fall Time | 15 µs |
RoHS | Compliant |
Radiation Hardening | No |
Drain to Source Voltage (Vdss) | 60 V |
Drain to Source Resistance | 100 mΩ |
Element Configuration | Single |
Number of Channels | 1 |
Number of Pins | 4 |
Height | 1.65 mm |
Number of Elements | 1 |
Width | 3.55 mm |
Lead Free | Lead Free |
Max Power Dissipation | 1.3 W |
Gate to Source Voltage (Vgs) | 5 V |
REACH SVHC | No SVHC |
Turn-On Delay Time | 8.6 µs |
Weight | 7.994566 mg |
Number of Outputs | 1 |
Resistance | 75 mΩ |
Max Operating Temperature | 150 °C |
Power Dissipation | 3 W |
Continuous Drain Current (ID) | 2.8 A |
Rise Time | 18 µs |
Fault Protection | Over Temperature, Over Voltage |
Length | 6.55 mm |
Turn-Off Delay Time | 34 µs |
Contact Plating | Tin |
Output Current per Channel | 2.8 A |
Packaging | Tape & Reel (TR) |
Interface | On/Off |
Max Output Current | 2.8 A |
Case/Package | SOT-223 |
Diodes Inc.
ZXMS6001N3 Series N-Channel 60 V 0.675 Ohm Protected INTELLIFETTM MOSFET-SOT-223
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!