1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 4V @ 150µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 120 nC @ 10 V |
FETFeature | 230W (Tc) |
DraintoSourceVoltage(Vdss) | MOSFET (Metal Oxide) |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | - |
FETType | 160A (Tc) |
Technology | N-Channel |
Current-ContinuousDrain(Id)@25°C | 60 V |
Vgs(Max) | 4520 pF @ 50 V |
MinRdsOn) | 4.2mOhm @ 75A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!