1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 2.5V @ 250µA |
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Vgs(th)(Max)@Id | ±12V |
Vgs | 71 nC @ 4.5 V |
FETFeature | 2.8W (Ta), 89W (Tc) |
DraintoSourceVoltage(Vdss) | 20 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | DIRECTFET™ MT |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | DirectFET™ Isometric MT |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 32A (Ta), 180A (Tc) |
Vgs(Max) | 6580 pF @ 10 V |
MinRdsOn) | 1.8mOhm @ 15A, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -40°C ~ 150°C (TJ) |
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