850B

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850B

Inventory

Part

850B

Manufacturer

Shikues

Description

Lead Free/ROHS

Datasheets

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Specification

Transition Frequency (fT)	100MHz
Operating Temperature	+150u2103@(Tj)
Transistor Type	NPN
DC Current Gain (hFE@Ic,Vce)	240@10u03bcA,5V
Power Dissipation (Pd)	250mW
Collector Current (Ic)	100mA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	90mV@10mA,0.5mA
Collector-Emitter Breakdown Voltage (Vceo)	35V