1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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RdsOn(Max)@Id | 2.1V @ 250µA |
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Vgs(th)(Max)@Id | 2270 pF @ 15 V |
Vgs | ±12V |
FETFeature | -40°C ~ 150°C (TJ) |
DraintoSourceVoltage(Vdss) | 30 V |
OperatingTemperature | DIRECTFET™ MQ |
DriveVoltage(MaxRdsOn | 4.5V, 7V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | DirectFET™ Isometric MQ |
InputCapacitance(Ciss)(Max)@Vds | 2.3W (Ta), 42W (Tc) |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | 26 nC @ 4.5 V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 12A (Ta), 49A (Tc) |
Vgs(Max) | - |
MinRdsOn) | 11.5mOhm @ 12A, 7V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | Surface Mount |
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