| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Current-ReverseLeakage@Vr | 363pF @ 1V, 1MHz |
|---|---|
| Speed | No Recovery Time > 500mA (Io) |
| F | TO-247-3 |
| ProductStatus | Obsolete |
| Package/Case | -40°C ~ 175°C |
| Grade | AEC-Q100/101 |
| Capacitance@Vr | Through Hole |
| ReverseRecoveryTime(trr) | 70 µA @ 650 V |
| MountingType | PG-TO247-3-41 |
| Series | CoolSiC™ |
| Qualification | |
| SupplierDevicePackage | 0 ns |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 12 A |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage-DCReverse(Vr)(Max) | 650 V |
| OperatingTemperature-Junction | Automotive |
| Current-AverageRectified(Io) | 12A |
| Package | Tube |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!