| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 1000 V |
|---|---|
| Vgs(th)(Max)@Id | 1.1Ohm @ 5.25A, 10V |
| Vgs | 10V |
| FETFeature | ±30V |
| DraintoSourceVoltage(Vdss) | TO-247AD |
| OperatingTemperature | - |
| DriveVoltage(MaxRdsOn | N-Channel |
| ProductStatus | Obsolete |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | 310W (Tc) |
| InputCapacitance(Ciss)(Max)@Vds | 130 nC @ 10 V |
| Series | POWER MOS IV® |
| Qualification | |
| SupplierDevicePackage | -55°C ~ 150°C (TJ) |
| FETType | 10.5A (Tc) |
| Technology | Through Hole |
| Current-ContinuousDrain(Id)@25°C | TO-247-3 |
| Vgs(Max) | 4V @ 1mA |
| MinRdsOn) | MOSFET (Metal Oxide) |
| Package | Tube |
| PowerDissipation(Max) | 2950 pF @ 25 V |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!