| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $8.64 | $8.4672 | $8.208 | $7.9488 | $7.6032 | Get Quotation! |
| RdsOn(Max)@Id | 4V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | - |
| Vgs | 160 nC @ 10 V |
| FETFeature | - |
| DraintoSourceVoltage(Vdss) | 400 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | - |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-247 [B] |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | POWER MOS V® |
| Qualification | |
| SupplierDevicePackage | TO-247-3 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 28A (Tc) |
| Vgs(Max) | 3600 pF @ 25 V |
| MinRdsOn) | 140mOhm @ 500mA, 10V |
| Package | Tube |
| PowerDissipation(Max) | - |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!
