1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 2.5V @ 1mA |
---|---|
Vgs(th)(Max)@Id | +25V, -10V |
Vgs | 125 nC @ 20 V |
FETFeature | 300W (Tc) |
DraintoSourceVoltage(Vdss) | 700 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 20V |
ProductStatus | Obsolete |
Package/Case | TO-247 [B] |
GateCharge(Qg)(Max)@Vgs | TO-247-3 |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | Through Hole |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 65A (Tc) |
Vgs(Max) | - |
MinRdsOn) | 70mOhm @ 32.5A, 20V |
Package | Bulk |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
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