shengyuic
shengyuic
BAQ333-TR3
the part number is BAQ333-TR3
Part
BAQ333-TR3
Description
DIODE GP 30V 200MA MICROMELF
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Current-ReverseLeakage@Vr 3pF @ 0V, 1MHz
Speed Small Signal =< 200mA (Io), Any Speed
F 2-SMD, No Lead
ProductStatus Obsolete
Package/Case -65°C ~ 175°C
Grade -
Capacitance@Vr Surface Mount
ReverseRecoveryTime(trr) 1 nA @ 15 V
MountingType MicroMELF
Series -
Qualification
SupplierDevicePackage -
Voltage-Forward(Vf)(Max)@If 1 V @ 100 mA
Technology Standard
Voltage-DCReverse(Vr)(Max) 30 V
OperatingTemperature-Junction -
Current-AverageRectified(Io) 200mA
Package Tape & Reel (TR)
Related Parts For BAQ333-TR3
BAQ33-GS08

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 30V 200MA SOD80

BAQ33-GS18

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 30V 200MA SOD80

BAQ333-TR

Vishay General Semiconductor - Diodes Division

DIODE GP 40V 200MA MICROMELF

BAQ333-TR3

Vishay General Semiconductor - Diodes Division

DIODE GP 30V 200MA MICROMELF

BAQ334-TR

Vishay General Semiconductor - Diodes Division

DIODE GP 60V 200MA MICROMELF

BAQ334-TR3

Vishay General Semiconductor - Diodes Division

DIODE GP 60V 200MA MICROMELF

BAQ335-TR

Vishay General Semiconductor - Diodes Division

DIODE GP 125V 200MA MICROMELF

BAQ335-TR3

Vishay General Semiconductor - Diodes Division

DIODE GP 125V 200MA MICROMELF

BAQ34-GS08

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 60V 200MA SOD80

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!