shengyuic
shengyuic
BSF045N03MQ3 G
the part number is BSF045N03MQ3 G
Part
BSF045N03MQ3 G
Manufacturer
Description
MOSFET N-CH 30V 18A/63A 2WDSON
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 2.2V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 34 nC @ 10 V
FETFeature -
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType MG-WDSON-2, CanPAK M™
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™
Qualification
SupplierDevicePackage 3-WDSON
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 18A (Ta), 63A (Tc)
Vgs(Max) 2600 pF @ 15 V
MinRdsOn) 4.5mOhm @ 20A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -40°C ~ 150°C (TJ)
Related Parts For BSF045N03MQ3 G
BSF024N03LT3G

Infineon

Power Field-Effect Transistor, 15A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN

BSF024N03LT3GXUMA1

Infineon Technologies

MOSFET N-CH 30V 15A/106A 2WDSON

BSF030NE2LQXUMA1

Infineon Technologies

MOSFET N-CH 25V 24A/75A 2WDSON

BSF035NE2LQXUMA1

Infineon Technologies

MOSFET N-CH 25V 22A/69A 2WDSON

BSF045N03LQ3G

INFINEON

Power Field-Effect Transistor, 18A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2

BSF045N03MQ3 G

Infineon Technologies

MOSFET N-CH 30V 18A/63A 2WDSON

BSF045N03MQ3G

INFINEON

Power Field-Effect Transistor, 18A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!