| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Continuous Drain Current (Id) | - |
|---|---|
| Input Capacitance (Ciss@Vds) | - |
| Type | - |
| Drain Source Voltage (Vdss) | - |
| Power Dissipation (Pd) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
| Total Gate Charge (Qg@Vgs) | - |
Nexperia
MOSFET Operating temperature: -55...+150 °C Housing type: SOT-23 Polarity: N Power dissipation: 500 mW
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!