| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 2V @ 30µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 20.9 nC @ 10 V |
| FETFeature | 2W (Ta) |
| DraintoSourceVoltage(Vdss) | 30 V |
| OperatingTemperature | - |
| DriveVoltage(MaxRdsOn | 4.5V, 10V |
| ProductStatus | Obsolete |
| Package/Case | PG-TSOP6-6 |
| GateCharge(Qg)(Max)@Vgs | SOT-23-6 Thin, TSOT-23-6 |
| Grade | |
| MountingType | - |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | OptiMOS™ |
| Qualification | |
| SupplierDevicePackage | Surface Mount |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 6.3A (Ta) |
| Vgs(Max) | 1401 pF @ 15 V |
| MinRdsOn) | 33mOhm @ 6.3A, 10V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Infineon
Small Signal Field-Effect Transistor, 7.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!