| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $1200.7584 | $1176.7432 | $1140.7205 | $1104.6977 | $1056.6674 | Get Quotation! |
| RdsOn(Max)@Id | 5.6V @ 182mA |
|---|---|
| Vgs(th)(Max)@Id | +22V, -4V |
| Vgs | - |
| FETFeature | 2460W (Tc) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| OperatingTemperature | Chassis Mount |
| DriveVoltage(MaxRdsOn | - |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | Module |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | Module |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Current-ContinuousDrain(Id)@25°C | 600A (Tc) |
| Vgs(Max) | 28000 pF @ 10 V |
| MinRdsOn) | - |
| Package | Tray |
| PowerDissipation(Max) | 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!