shengyuic
shengyuic
BSO613SPV
the part number is BSO613SPV
Part
BSO613SPV
Manufacturer
Description
MOSFET P-CH 60V 3.44A 8DSO
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 60V
Power Dissipation (Max): 2.5W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 4V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Detailed Description: P-Channel 60V 3.44A (Ta) 2.5W (Ta) Surface Mount PG-DSO-8
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: P-Channel
Series: SIPMOS®
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
Other Names: BSO613SPVT SP000012847
Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.44A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Related Parts For BSO613SPV
BSO604NS2XUMA1

Infineon Technologies

MOSFET 2N-CH 55V 5A 8DSO

BSO612CV

Infineon Technologies

MOSFET N/P-CH 60V 3A/2A 8DSO

BSO612CVGHUMA1

Infineon Technologies

MOSFET N/P-CH 60V 3A/2A 8DSO

BSO612CVGXUMA1

Infineon Technologies

MOSFET N/P-CH 8-SOIC

BSO613SPV

Infineon

MOSFET P-CH 60V 3.44A 8DSO

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!