shengyuic
shengyuic
BSP603S2LHUMA1
the part number is BSP603S2LHUMA1
Part
BSP603S2LHUMA1
Manufacturer
Description
MOSFET N-CH 55V 5.2A SOT223-4
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 2V @ 50µA
Vgs(th)(Max)@Id ±20V
Vgs 42 nC @ 10 V
FETFeature 1.8W (Ta)
DraintoSourceVoltage(Vdss) 55 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType PG-SOT223-4
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™
Qualification
SupplierDevicePackage TO-261-4, TO-261AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 5.2A (Ta)
Vgs(Max) 1390 pF @ 25 V
MinRdsOn) 33mOhm @ 2.6A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For BSP603S2LHUMA1
BSP60

Infineon Technologies

TRANS PNP DARL 45V 1A SOT223-4

BSP60,115

Nexperia USA Inc.

TRANS PNP DARL 45V 1A SOT223

BSP603S2LHUMA1

Infineon Technologies

MOSFET N-CH 55V 5.2A SOT223-4

BSP603S2LNT

Infineon Technologies

N-CHANNEL POWER MOSFET

BSP60E6327

Infineon Technologies

TRANS PNP DARL 45V 1A SOT223-4

BSP60E6327HTSA1

Infineon Technologies

TRANS PNP DARL 45V 1A SOT223-4

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!