| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 4V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | 1900 pF @ 25 V |
| Vgs | ±20V |
| FETFeature | -55°C ~ 150°C (TJ) |
| DraintoSourceVoltage(Vdss) | 200 V |
| OperatingTemperature | PG-TO263-3 |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| InputCapacitance(Ciss)(Max)@Vds | 125W (Tc) |
| Series | SIPMOS® |
| Qualification | |
| SupplierDevicePackage | - |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 21A (Tc) |
| Vgs(Max) | - |
| MinRdsOn) | 130mOhm @ 13.5A, 10V |
| Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
| PowerDissipation(Max) | Surface Mount |
Infineon
Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!