shengyuic
shengyuic
BYC30B-600PJ
the part number is BYC30B-600PJ
Part
BYC30B-600PJ
Manufacturer
Description
DIODE GEN PURP 600V 30A D2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.9435 $0.9246 $0.8963 $0.868 $0.8303 Get Quotation!
Specification
Current-ReverseLeakage@Vr 10 µA @ 600 V
Speed Fast Recovery =< 500ns, > 200mA (Io)
F Surface Mount
ProductStatus Active
Package/Case D2PAK
Grade -
Capacitance@Vr -
ReverseRecoveryTime(trr) 35 ns
MountingType TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Series -
Qualification
SupplierDevicePackage 175°C (Max)
Voltage-Forward(Vf)(Max)@If 2.75 V @ 30 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 600 V
OperatingTemperature-Junction -
Current-AverageRectified(Io) 30A
Package Tape & Reel (TR)
Related Parts For BYC30B-600PJ
BYC30-1200P

WeEn Semiconductors

TO220-2

BYC30-1200PQ

WeEn Semiconductors

DIODE GEN PURP 1.2KV 30A TO220AC

BYC30-600P

WeEn Semiconductors

TO220-2

BYC30-600P,127

WeEn Semiconductors

DIODE GEN PURP 600V 30A TO220AC

BYC30B-600PJ

WeEn Semiconductors

DIODE GEN PURP 600V 30A D2PAK

BYC30DW-600P

WeEn Semiconductors

TO-3P

BYC30DW-600PQ

WeEn Semiconductors

DIODE GEN PURP 600V 30A TO247-2

BYC30JT-600PSQ

WeEn Semiconductors

DIODE GEN PURP 600V 30A TO3PF

BYC30M-650PQ

WeEn Semiconductors

BYC30M-650P/TO220-2L/STANDARD MA

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!