shengyuic
shengyuic
DMTH10H005SCT
the part number is DMTH10H005SCT
Part
DMTH10H005SCT
Manufacturer
Description
MOSFET N-CH 100V 140A TO220AB
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $2.088 $2.0462 $1.9836 $1.921 $1.8374 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 111.7 nC @ 10 V
FETFeature 187W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-220AB
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-220-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 140A (Tc)
Vgs(Max) 8474 pF @ 50 V
MinRdsOn) 5mOhm @ 13A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For DMTH10H005SCT
DMTH1005SPS-13

Diodes Inc.

POWERDI5060-8

DMTH1005SPSQ-13

Diodes Inc.

POWERDI5060-8

DMTH10H003SPSW-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

DMTH10H005LCT

Diodes Incorporated

MOSFET N-CH 100V 140A TO220AB

DMTH10H005SCT

Diodes Incorporated

MOSFET N-CH 100V 140A TO220AB

DMTH10H009LFG-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

DMTH10H009LFG-7

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

DMTH10H009LFGQ-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

DMTH10H009LFGQ-7

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!