shengyuic
shengyuic
FCI11N60
the part number is FCI11N60
Part
FCI11N60
Manufacturer
Description
MOSFET N-CH 600V 11A I2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.3673 $1.34 $1.2989 $1.2579 $1.2032 Get Quotation!
Specification
RdsOn(Max)@Id 5V @ 250µA
Vgs(th)(Max)@Id ±30V
Vgs 52 nC @ 10 V
FETFeature 125W (Tc)
DraintoSourceVoltage(Vdss) 600 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType TO-262 (I2PAK)
InputCapacitance(Ciss)(Max)@Vds -
Series SuperFET™
Qualification
SupplierDevicePackage TO-262-3 Long Leads, I2PAK, TO-262AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 11A (Tc)
Vgs(Max) 1490 pF @ 25 V
MinRdsOn) 380mOhm @ 5.5A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For FCI11N60
FCI1005F-1R0M

TAI-TECH Advanced Electronics Co., Ltd.

IND 1UH 0.9OHM 15MA

FCI1005F-1R8M

TAI-TECH Advanced Electronics Co., Ltd.

IND 1.8UH 1.45OHM 15MA

FCI1005F-2R2M

TAI-TECH Advanced Electronics Co., Ltd.

IND 2.2UH 1.7OHM 10MA

FCI11N60

onsemi

MOSFET N-CH 600V 11A I2PAK

FCI11N60

Fairchild Semiconductor

MOSFET N-CH 600V 11A I2PAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!