| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Vce(on) (Max) @ Vge, Ic | - |
|---|---|
| Current - Collector (Ic) (Max) | - |
| Gate Threshold Voltage-VGE(th) | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| IGBT Type | - |
Infineon
INFINEON FD900R12IP4DIGBT Array & Module Transistor, High Power, N Channel, 900 A, 1.7 V, 5.1 kW, 1.2 kV, Module
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!