shengyuic
shengyuic
FDD5612
the part number is FDD5612
Part
FDD5612
Manufacturer
Description
MOSFET N-CH 60V 5.4A TO252-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 3V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 11 nC @ 10 V
FETFeature 3.8W (Ta), 42W (Tc)
DraintoSourceVoltage(Vdss) 60 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 6V, 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-252AA
InputCapacitance(Ciss)(Max)@Vds -
Series PowerTrench®
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 5.4A (Ta)
Vgs(Max) 660 pF @ 30 V
MinRdsOn) 55mOhm @ 5.4A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For FDD5612
FDD5.5-250-10

Remington Industries

CONN QC F 10-12AWG CRIMP 10PC

FDD5.5-250-100

Remington Industries

CONN QC F 10-12AWG CRIMP 100PC

FDD5202P

Fairchild Semiconductor

Non-Compliant

FDD5353

ON Semiconductor

Trans MOSFET N-CH 60V 11.5A 3-Pin(2+Tab) DPAK T/R

FDD5353

onsemi

MOSFET N-CH 60V 11.5A/50A DPAK

FDD5514P

FAIRCHILD

D-PAKTO-252

FDD5612

ON Semiconductor

MOSFET N-CH 60V 5.4A DPAK

FDD5612

onsemi

MOSFET N-CH 60V 5.4A TO252-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!