shengyuic
shengyuic
FDD6035AL
the part number is FDD6035AL
Part
FDD6035AL
Description
N-CHANNEL POWER MOSFET
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.5408 $0.53 $0.5138 $0.4975 $0.4759 Get Quotation!
Specification
RdsOn(Max)@Id 3V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 18 nC @ 5 V
FETFeature 1.5W (Ta), 56W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-252 (DPAK)
InputCapacitance(Ciss)(Max)@Vds -
Series PowerTrench®
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 12A (Ta), 46A (Tc)
Vgs(Max) 1230 pF @ 15 V
MinRdsOn) 12mOhm @ 12A, 10V
Package Bulk
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For FDD6035AL
FDD6030BL

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

FDD6030L

ON Semiconductor

Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R

FDD6030L

onsemi

MOSFET N-CH 30V 12A/50A DPAK

FDD6030L

Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 5

FDD6035AL

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!