| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $1.364 | $1.3367 | $1.2958 | $1.2549 | $1.2003 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 100V, 80V |
|---|---|
| Package / Case: | 12-WDFN Exposed Pad |
| Mounting Type: | Surface Mount |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | 12-MLP (5x4.5) |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5) |
| FET Feature: | Logic Level Gate |
| Power - Max: | 2.5W |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 6 Weeks |
| Email: | [email protected] |
| FET Type: | 2 N and 2 P-Channel (H-Bridge) |
| Series: | GreenBridge™ PowerTrench® |
| Current - Continuous Drain (Id) @ 25°C: | 3.4A, 2.6A |
| Base Part Number: | FDMQ8203 |
| Other Names: | FDMQ8203CT |
| Input Capacitance (Ciss) (Max) @ Vds: | 210pF @ 50V |
| Rds On (Max) @ Id, Vgs: | 110 mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
ON Semiconductor
This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!