FDU7N60NZTU

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Specification

Drain to Source Voltage (Vdss):	600V
Power Dissipation (Max):	90W (Tc)
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type:	Through Hole
Packaging:	Tube
Supplier Device Package:	I-PAK
Vgs(th) (Max) @ Id:	5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):	10V
Lead Free Status / RoHS Status:	Lead free / RoHS Compliant
Detailed Description:	N-Channel 600V 5.5A (Tc) 90W (Tc) Through Hole I-PAK
FET Feature:	-
Moisture Sensitivity Level (MSL):	1 (Unlimited)
Email:	[email protected]
FET Type:	N-Channel
Series:	UniFET-II™
Current - Continuous Drain (Id) @ 25°C:	5.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:	730pF @ 25V
Vgs (Max):	±25V
Rds On (Max) @ Id, Vgs:	1.25 Ohm @ 2.75A, 10V
Technology:	MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Operating Temperature:	-55°C ~ 150°C (TJ)