shengyuic
shengyuic
FESB16ATHE3_A/I
the part number is FESB16ATHE3_A/I
Part
FESB16ATHE3_A/I
Description
DIODE GEN PURP 50V 16A TO263AB
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.986 $0.9663 $0.9367 $0.9071 $0.8677 Get Quotation!
Specification
Current-ReverseLeakage@Vr 10 µA @ 50 V
Speed Fast Recovery =< 500ns, > 200mA (Io)
F Surface Mount
ProductStatus Last Time Buy
Package/Case TO-263AB (D2PAK)
Grade AEC-Q101
Capacitance@Vr 175pF @ 4V, 1MHz
ReverseRecoveryTime(trr) 35 ns
MountingType TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Series -
Qualification
SupplierDevicePackage -65°C ~ 150°C
Voltage-Forward(Vf)(Max)@If 975 mV @ 16 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 50 V
OperatingTemperature-Junction Automotive
Current-AverageRectified(Io) 16A
Package Tape & Reel (TR)
Related Parts For FESB16ATHE3_A/I
FESB16AT-E3/45

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 16A TO263AB

FESB16AT-E3/81

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 16A TO263AB

FESB16ATHE3_A/I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 16A TO263AB

FESB16ATHE3_A/P

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 16A TO263AB

FESB16BT-E3/45

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 16A TO263AB

FESB16BT-E3/81

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 16A TO263AB

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!